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Two-dimensional (2D) hexagonal boron nitride (h-BN) is one of the few materials showing great promise for light emission in the far ultraviolet (UV)-C wavelength, which is more effective and safer in containing the transmission of microbial diseases than traditional UV light. In this report, we observed that h-BN, despite having an indirect energy bandgap, exhibits a remarkably high room-temperature quantum efficiency (∼60%), which is orders of magnitude higher than that of other indirect bandgap material, and is enabled by strong excitonic effects and efficient exciton-phonon interactions. This study offers a new approach for the design and development of far UV-C optoelectronic devices as well as quantum photonic devices employing 2D semiconductor active regions. 

Abstract Monolayer hexagonal boron nitride (hBN) has been widely considered a fundamental building block for 2D heterostructures and devices. However, the controlled and scalable synthesis of hBN and its 2D heterostructures has remained a daunting challenge. Here, an hBN/graphene (hBN/G) interface‐mediated growth process for the controlled synthesis of high‐quality monolayer hBN is proposed and further demonstrated. It is discovered that the in‐plane hBN/G interface can be precisely controlled, enabling the scalable epitaxy of unidirectional monolayer hBN on graphene, which exhibits a uniform moiré superlattice consistent with single‐domain hBN, aligned to the underlying graphene lattice. Furthermore, it is identified that the deep‐ultraviolet emission at 6.12 eV stems from the 1s‐exciton state of monolayer hBN with a giant renormalized direct bandgap on graphene. This work provides a viable path for the controlled synthesis of ultraclean, wafer‐scale, atomically ordered 2D quantum materials, as well as the fabrication of 2D quantum electronic and optoelectronic devices.